Physical Vapor Transport (PVT)

Sublimation growth with a seed crystal—also known as Physical Vapor Transport—is a variation on the Lely Method. Today PVT is a standard method for growing monocrystalline Silicon Carbide. Thanks to their outstanding properties, crystals produced by means of PVT are used above all in the semiconductor industry and R&D sector.

The Process

In the PVT process polycrystalline Silicon Carbide (SiC) undergoes sublimation at the source at a high temperature (1,800–2,600 °C) and low pressure. In a carrier gas (e.g. Argon), the resulting Silicon and Carbon particles are transported through natural mechanisms to the cooler seed crystal, where crystallization through oversaturation takes place. In contrast to the CVD method, no chemical reaction with the carrier gas takes place. The seed crystal is usually located at the upper end of the crucible to prevent contamination from falling particles.

Applications

Our PVT-series systems are specially designed for producing Silicon-Carbide crystals for the semiconductor industry and R&D sector.

 

About Our PVT Systems

Immediate Contact

slideoutcontact
Please complete all fields marked with *.
Please solve the following question:
captcha

PVA TePla Korea
B3126,3127, 27
Dongtancheomdansaneop 1-ro,
Hwaseong-si
Gyeonggi-do 
18469

Phone: +82 31 723 0301
Fax: +82 31 723 0302